Ni1 B1 Te1

semiconductor

· Ni1 B1 Te1

NiBTe (nickel-boron-tellurium) is an experimental ternary semiconductor compound combining transition metal, metalloid, and chalcogen elements. This material belongs to the broader class of narrow-bandgap semiconductors and is primarily investigated in research contexts for potential optoelectronic and thermoelectric applications, where the unique band structure and carrier transport properties resulting from its three-element composition may offer advantages over binary alternatives.

thermoelectric devicesnarrow-bandgap semiconductorsoptoelectronic researchinfrared detectorsmaterials research and developmentexotic compound semiconductors

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.07360	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	0.7680	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Ni1 B1 Te1

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control