NiAsO₃ is a nickel arsenate compound belonging to the mixed-metal oxide semiconductor family, combining nickel and arsenic in an oxide matrix. This material is primarily of research and developmental interest rather than established industrial production, with potential applications in catalysis, photocatalytic processes, and specialized electronic devices where arsenic-containing semiconductors offer unique band structure properties. Its selection would depend on specific requirements for catalytic activity or photocurrent generation that justify the handling of arsenic-containing phases over more conventional nickel oxides or ternary compounds.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.00480 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.4580 | eV/atom | — |