Ni1 As1 O3

semiconductor
· Ni1 As1 O3

NiAsO₃ is a nickel arsenate compound belonging to the mixed-metal oxide semiconductor family, combining nickel and arsenic in an oxide matrix. This material is primarily of research and developmental interest rather than established industrial production, with potential applications in catalysis, photocatalytic processes, and specialized electronic devices where arsenic-containing semiconductors offer unique band structure properties. Its selection would depend on specific requirements for catalytic activity or photocurrent generation that justify the handling of arsenic-containing phases over more conventional nickel oxides or ternary compounds.

catalytic materials (research)photocatalysis applicationssemiconductor researcharsenic compound systemsenvironmental remediation (development stage)

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65
PropertyValueUnitConditionsSource
Band Gap(Eg)
eV
Verified Unverified Low confidence (<80%) Link to source
PropertyValueUnitConditionsSource
Formation Energy(ΔHf)
eV/atom
Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.