NeGa3 is a ceramic compound in the gallium nitride (GaN) material family, likely a ternary or doped variant used in semiconductor and high-performance applications. This material is of primary interest in research and advanced device contexts where wide bandgap semiconductors offer superior thermal stability, high-frequency performance, and radiation hardness compared to conventional silicon-based alternatives.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 4.315 | kg/m³ | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | DFT · OptB88vdW | ||
Magnetic Moment(μB) | 0.000 | µB | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.3246 | eV/atom | DFT · OptB88vdW | ||
Formation Energy(ΔHf) | 0.3185 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data