Nd₃GaN is an experimental rare-earth gallium nitride ceramic compound combining neodymium with the wide-bandgap semiconductor family of gallium nitride. This material is primarily explored in research settings for advanced electronic and photonic applications, where the rare-earth doping is investigated for potential improvements in luminescence, magnetic properties, or thermal management compared to undoped GaN. While not yet established in high-volume industrial production, Nd₃GaN represents the broader family of rare-earth-doped nitride ceramics being developed for next-generation RF devices, optoelectronics, and high-temperature applications.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 40.13 | GPa | DFT · OptB88vdW | ||
Poisson's Ratio(ν) | 0.3900 | - | DFT · OptB88vdW | ||
Shear Modulus(G) | 18.02 | GPa | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 5.249 | kg/m³ | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 0.000 | eV | DFT · OptB88vdW | ||
| ↳ | 0.000 | eV | DFT · TBmBJ | ||
Magnetic Moment(μB) | 0.000 | µB | DFT · OptB88vdW | ||
Thermoelectric Power Factor(PF)2 entries | 0.00177 | W/(m·K²) | DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C | ||
| ↳ | 0.00178 | W/(m·K²) | DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C | ||
Seebeck Coefficient(S)2 entries | -35.26 | μV/K | DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C | ||
| ↳ | -35.70 | μV/K | DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 1.802 | eV/atom | DFT · OptB88vdW | ||
Formation Energy(ΔHf) | 0.9209 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data