Nd3 In1 N1
semiconductorNd3In1N1 is an intermetallic nitride compound combining rare-earth neodymium with indium and nitrogen, representing an experimental semiconductor material from the rare-earth nitride family. This compound is primarily of research interest for advanced electronic and optoelectronic applications, where rare-earth nitrides are being explored for their potential in high-performance semiconductors, photonic devices, and magnetic applications. Engineers would consider rare-earth nitride compounds like this as candidates for next-generation wide-bandgap semiconductors or specialized functional materials where the combination of rare-earth and group-III elements offers unique electronic or magnetic properties unavailable in conventional semiconductors.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | — | Pa | — | — | |
Shear Modulus(G) | — | Pa | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | — | eV/atom | — | — |