NbAgO3
semiconductorNbAgO3 is an experimental mixed-metal oxide semiconductor combining niobium and silver with oxygen, representing a ternary perovskite or perovskite-related compound family. This material remains primarily in research and development phases, with potential applications in photocatalysis, optoelectronics, and functional oxide devices where the combination of niobium's refractory properties and silver's photocatalytic activity may offer advantages over binary oxides or conventional semiconductors. Engineers would consider this material for emerging technologies requiring visible-light response or enhanced surface reactivity, though commercial availability and reproducibility remain limited compared to established alternatives.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K)2 entries | 190.3 | GPa | — | ||
| ↳ | 171.7 | GPa | — | ||
Poisson's Ratio(ν) | 0.3000 | - | — | ||
Shear Modulus(G)2 entries | 79.35 | GPa | — | ||
| ↳ | 88.07 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 6.590 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)3 entries | 1.521 | eV | — | ||
| ↳ | 0.000 | eV | — | ||
| ↳ | 0.8510 | eV | — | ||
Dielectric Constant (Relative Permittivity)(εr) | 14.83 | - | — | ||
Magnetic Moment(μB)3 entries | 0.000 | μB | — | ||
| ↳ | -0.00747 | μB | — | ||
| ↳ | 0.000 | µB | — | ||
Piezoelectric Modulus(eij) | 0.000 | C/m² | — | ||
Seebeck Coefficient(S) | -274 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.00770 | eV/atom | — | ||
Formation Energy(ΔHf)3 entries | -1.870 | eV/atom | — | ||
| ↳ | 1.560 | eV/atom | — | ||
| ↳ | -1.945 | eV/atom | — |