Nb8 O10
semiconductorNb₈O₁₀ is a mixed-valence niobium oxide ceramic compound belonging to the family of reduced niobium oxides, which exhibit semiconductor behavior due to oxygen deficiency and electronic disorder. This material is primarily studied in research contexts for applications requiring high-temperature stability and ionic/electronic conductivity, including solid-state electrolytes, resistive switching devices, and photocatalytic systems. Compared to more common oxides, reduced niobium oxides offer tunable electronic properties through controlled oxidation states, making them candidates for emerging technologies in energy conversion and electronic switching, though industrial adoption remains limited and most applications remain developmental.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | — | eV/atom | — | — |