Nb₄Se₈ is a layered transition metal chalcogenide semiconductor composed of niobium and selenium, belonging to the family of low-dimensional materials with quasi-2D crystal structures. This is primarily a research compound investigated for its electronic and optoelectronic properties, offering potential applications in flexible electronics, photovoltaics, and nanodevice engineering where layer-dependent band structure and tunable properties are advantageous. Interest in this material stems from its anisotropic mechanical and electrical characteristics typical of chalcogenides, making it a candidate for exploring beyond-silicon semiconductor platforms in emerging technologies.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 51.49 | GPa | — | ||
Shear Modulus(G) | 30.43 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.00980 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.8610 | eV/atom | — |