Nb₄Se₄Br₁₂ is a mixed-halide layered semiconductor compound combining niobium, selenium, and bromine in a structural framework typical of quasi-2D materials. This is a research-phase compound primarily investigated for its electronic and optoelectronic properties rather than established industrial production. The layered architecture and halide composition position this material within the broader family of layered chalcohalides, which show promise for tunable bandgaps, strong light-matter interaction, and potential applications in next-generation photonics and quantum devices, though practical engineering adoption remains limited to laboratory-scale exploration.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 18.53 | GPa | — | ||
Shear Modulus(G) | 9.300 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.05420 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.8550 | eV/atom | — |