Nb₄O₁₄Tl₄ is an experimental mixed-metal oxide semiconductor combining niobium pentoxide with thallium oxides, representing a rare earth/heavy metal oxide compound class studied primarily in materials research rather than established industrial production. This compound is of interest in the semiconducting oxide family for potential applications in optoelectronics and solid-state physics, though it remains largely in the research phase with limited commercial deployment. Engineers would consider this material only for specialized research contexts or emerging device architectures where the unique electronic properties of thallium-doped niobate systems offer advantages over conventional semiconductors.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.02900 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -2.036 | eV/atom | — |