Nb2SiTe4 is a ternary intermetallic compound combining niobium, silicon, and tellurium, representing an emerging material in the layered transition metal chalcogenide family. This is primarily a research-phase material being investigated for its potential in electronic and thermoelectric applications, where the layered crystal structure and mixed metallic-semiconducting character offer advantages for charge transport and thermal management. The material's composition positions it as a candidate for next-generation energy conversion devices and potentially for applications requiring materials with tunable electronic properties at the nanoscale.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 59.03 | GPa | — | ||
Exfoliation Energy(Eexf) | 121.2 | meV/atom | — | ||
Poisson's Ratio(ν) | 0.2800 | - | — | ||
Shear Modulus(G) | 31.38 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 6.656 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | — | ||
Seebeck Coefficient(S) | -10.62 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.2030 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.2261 | eV/atom | — |