Nb₂Si₁Te₄ is a ternary semiconductor compound combining niobium, silicon, and tellurium elements. This material belongs to the family of mixed-metal chalcogenides and remains primarily in the research phase, investigated for its potential in thermoelectric and optoelectronic applications where layered or complex crystal structures can enable tunable band gaps and charge transport. The combination of a refractory metal (niobium) with a metalloid (silicon) and chalcogen (tellurium) positions it as a candidate for high-temperature stability and potential use in energy conversion or advanced sensing devices where conventional binary semiconductors reach their limits.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 59.03 | GPa | — | ||
Shear Modulus(G) | 31.38 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.00250 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.2260 | eV/atom | — |