Nb₂I₄O₂ is a mixed-valence niobium iodide oxide semiconductor, a layered compound belonging to the family of transition metal halide oxides. This material is primarily of research interest rather than established industrial use, being studied for potential applications in optoelectronics and solid-state chemistry due to its mixed-dimensional structure and tunable electronic properties.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.02370 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.335 | eV/atom | — |