Nb₁Se₈W₃ is a mixed-metal selenide semiconductor compound combining niobium, selenium, and tungsten in a layered or complex crystal structure. This is a research-phase material being investigated for its electronic and optoelectronic properties, likely within the broader family of transition-metal chalcogenides known for tunable band gaps and potential two-dimensional behavior. The combination of heavy transition metals (W, Nb) with selenium suggests interest in applications requiring strong light-matter interaction, charge carrier mobility, or heterostructure integration in next-generation devices.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 57.80 | GPa | — | ||
Shear Modulus(G) | 39.48 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.06450 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.6145 range -0.6160–-0.6130median of 2 measurements | eV/atom | — |