Nb₁Se₁₂W₅ is a mixed-metal chalcogenide semiconductor compound combining niobium, tungsten, and selenium in a layered structure. This is primarily a research-phase material investigated for its potential in thermoelectric and optoelectronic applications, belonging to the broader family of transition-metal dichalcogenides and polychalcogenides that show promise for energy conversion and light-based devices.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.04490 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.5930 | eV/atom | — |