NbS₂ is a layered transition metal dichalcogenide semiconductor composed of niobium and sulfur, belonging to the family of two-dimensional materials with van der Waals-stacked crystal structure. This compound is primarily of research and emerging industrial interest for applications requiring semiconducting behavior in atomically thin form, particularly in optoelectronics, catalysis, and flexible electronics where its tunable bandgap and mechanical flexibility offer advantages over conventional semiconductors. NbS₂ is notable as a promising candidate for next-generation devices that exploit two-dimensional material properties, though it remains less commercially established than graphene or MoS₂ analogues.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 65.34 | GPa | — | ||
Shear Modulus(G) | 34.39 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.00650 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.8700 | eV/atom | — |