Nb1 In1 Se2

semiconductor

· Nb1 In1 Se2

NbInSe₂ is a ternary layered semiconductor compound combining niobium, indium, and selenium in a 1:1:2 stoichiometry. This material belongs to the family of transition metal chalcogenides and is primarily studied in research contexts for its potential in optoelectronic and electronic device applications, particularly where layered crystal structures enable tunable band gaps and anisotropic transport properties. NbInSe₂ is notably investigated as a candidate for next-generation photovoltaic devices, photodetectors, and two-dimensional material heterostructures, where its layered structure offers advantages over bulk semiconductors for achieving quantum confinement effects and improved light-matter interactions.

research/experimental semiconductorsphotodetectorsphotovoltaic devices2D material heterostructuresoptoelectronic applicationsquantum devices

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Bulk Modulus(K)	46.98	GPa	—
Shear Modulus(G)	26.95	GPa	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.00550	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-0.7130	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Nb1 In1 Se2

Mechanical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control