NaSnO2F

semiconductor

· NaSnO2F

NaSnO2F is a mixed-cation tin oxide fluoride compound belonging to the family of metal oxide-fluoride semiconductors. While primarily investigated as a research material, it represents an emerging class of compounds designed to combine tin oxide semiconducting properties with fluoride dopant effects, potentially offering tuned electronic characteristics for optoelectronic or thin-film device applications. Interest in this material family stems from the search for alternatives to conventional oxide semiconductors with improved carrier mobility, transparency, or band gap engineering through fluoride incorporation.

experimental semiconductor researchthin-film electronicstransparent conductive oxidesnext-generation display materialsphotocatalytic applicationsband-gap engineering

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	1.100	eV	—
Magnetic Moment(μB)	-3.087e-15	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	0.3800	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

NaSnO2F

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control