NaSbP₂S₆ is a ternary chalcogenide semiconductor compound combining sodium, antimony, phosphorus, and sulfur elements. This material belongs to the family of metal phosphorus sulfides and is primarily investigated in research contexts for photovoltaic and optoelectronic applications due to its semiconducting band gap and layered crystal structure. Its mixed-anion composition makes it a candidate for thin-film solar cells, solid-state batteries, and specialized optical devices where conventional semiconductors like silicon or CdTe may not be suitable.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 21.30 | GPa | — | ||
Poisson's Ratio(ν) | 0.2700 | - | — | ||
Shear Modulus(G) | 12.28 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 2.902 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 2.170 | eV | — | ||
| ↳ | 2.020 | eV | — | ||
Dielectric Constant (Relative Permittivity)(εr) | 18.44 | - | — | ||
Magnetic Moment(μB) | 0.000 | µB | — | ||
Piezoelectric Modulus(eij) | 0.1668 | C/m² | — | ||
Seebeck Coefficient(S) | -308.9 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.4854 | eV/atom | — |