NaGaAs is a ternary compound semiconductor ceramic composed of sodium, gallium, and arsenic elements. It belongs to the III-V semiconductor family and is primarily of research interest rather than established commercial production, used in experimental photonic and electronic device development where compound semiconductors offer superior performance over silicon. Engineers consider this material for specialized optoelectronic applications where the bandgap and lattice properties of III-V compounds enable high-speed electronics, infrared detection, or photovoltaic conversion, though manufacturing complexity and cost typically limit adoption to high-performance niche applications.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 32.03 | GPa | DFT · OptB88vdW | ||
Poisson's Ratio(ν) | 0.2900 | - | DFT · OptB88vdW | ||
Shear Modulus(G) | 2.520 | GPa | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 3.989 | kg/m³ | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 0.000 | eV | DFT · OptB88vdW | ||
| ↳ | 0.000 | eV | DFT · TBmBJ | ||
Magnetic Moment(μB) | 0.000 | µB | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.4744 | eV/atom | DFT · OptB88vdW | ||
Formation Energy(ΔHf) | 0.09810 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data