Na12As4S12 is a mixed-valence arsenic sulfide semiconductor compound belonging to the family of alkali-metal chalcogenides with layered or framework structures. This material is primarily of research interest for solid-state chemistry and materials science, investigated for its electronic properties and potential in photovoltaic or optoelectronic applications where arsenic chalcogenides are explored as alternatives to more conventional semiconductors.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 2.541 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.9670 | eV/atom | — |