Na₁S₂Sn₁ is a ternary semiconductor compound combining sodium, sulfur, and tin—a research-phase material being investigated for optoelectronic and energy storage applications. This composition belongs to the broader family of chalcogenide semiconductors, which are valued for tunable band gaps and ionic conductivity. While not yet in mainstream commercial production, such tin-sulfide compounds show promise for thin-film photovoltaics, solid-state battery electrolytes, and thermoelectric devices where cost-effective, earth-abundant alternatives to conventional semiconductors are sought.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 43.80 | GPa | — | ||
Shear Modulus(G) | 26.50 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.00170 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.8090 | eV/atom | — |