N8O4 is a ceramic semiconductor compound composed of nitrogen and oxygen elements, likely representing a metal nitride-oxide or oxynitride phase with potential semiconductor properties. This material family is primarily explored in research contexts for advanced electronic and photonic applications, where the combination of nitrogen and oxygen can create intermediate bandgap materials distinct from pure oxides or nitrides. Its semiconductor classification suggests potential interest in optoelectronics, photocatalysis, or high-temperature electronic devices where traditional semiconductors face thermal or chemical limitations.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 11.93 | GPa | — | ||
Shear Modulus(G) | 5.300 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 3.173 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 1.573 | eV/atom | — |