N₄O₄S₄Se₂ is an experimental mixed-anion semiconductor compound containing nitrogen, oxygen, sulfur, and selenium elements in a defined stoichiometric ratio. This material belongs to the family of multinary chalcogenide semiconductors, which are investigated for their tunable electronic properties arising from compositional flexibility and mixed anionic character. Research compounds of this type show potential in optoelectronic and photovoltaic applications where band gap engineering and carrier transport optimization are critical, though commercial deployment remains limited and the specific synthesis routes and phase stability conditions require further development.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 15.33 | GPa | — | ||
Shear Modulus(G) | 8.820 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.482 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.1210 | eV/atom | — |