N2 U1 is a semiconductor material belonging to the nitride family, likely a uranium nitride compound or related uranium-based semiconducting phase. This material represents an advanced research compound with potential applications in high-temperature electronics and nuclear-related technologies where conventional semiconductors would be unsuitable. Its notable characteristics stem from its ability to maintain semiconducting properties under extreme conditions, making it of interest for specialized aerospace, nuclear, and high-energy physics applications where thermal stability and radiation tolerance are critical advantages over traditional silicon or III-V semiconductors.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 262.0 | GPa | — | ||
Shear Modulus(G) | 115.1 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.8641 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.575 | eV/atom | — |