N₂Sr₁Zr₁ is an experimental nitride semiconductor compound combining strontium and zirconium in a nitrogen-rich matrix. This material belongs to the family of ternary metal nitrides, which are being researched for wide-bandgap semiconductor applications where high thermal stability and mechanical rigidity are advantageous. While not yet commercialized at scale, nitride semiconductors in this composition space show potential for high-temperature electronics, power devices, and heterostructure applications where conventional binary nitrides (like GaN) reach fundamental limits.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 158.0 | GPa | — | ||
Shear Modulus(G) | 114.0 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.02570 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.568 | eV/atom | — |