N1 Ta1 — Properties & Data | MatWorld

N1 Ta1

semiconductor

· N1 Ta1

N1 Ta1 is a tantalum-based semiconductor compound with niobium incorporation, belonging to the refractory metal oxide or nitride family. This material is primarily of research interest for advanced electronic and optoelectronic applications where high thermal stability and chemical inertness are required. Its exceptional mechanical rigidity and resistance to oxidation make it a candidate for next-generation semiconductor devices, though industrial adoption remains limited pending further development and characterization.

experimental semiconductorshigh-temperature electronicsrefractory metal compoundsresearch optoelectronicsadvanced circuit materialsextreme environment devices

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Bulk Modulus(K)	335.1	GPa	DFT · OptB88vdW
Shear Modulus(G)	146.8	GPa	DFT · OptB88vdW

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.01550	eV	DFT · OptB88vdW

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-0.9870	eV/atom	DFT · OptB88vdW

Verified Unverified Low confidence (<80%) Link to source

Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

N1 Ta1

Mechanical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control