N1 In1

semiconductor

· N1 In1

N1 In1 is a binary III-V semiconductor compound composed of nitrogen and indium, belonging to the nitride semiconductor family. This material is primarily of research and emerging technology interest, with potential applications in high-frequency electronics, optoelectronics, and power conversion devices where III-V nitrides are valued for their wide bandgap, high electron mobility, and thermal stability. While gallium nitride (GaN) currently dominates commercial III-V nitride applications, indium nitride and indium-rich compounds are investigated for specialized roles including terahertz devices, infrared detectors, and high-efficiency photovoltaics.

terahertz optoelectronicsinfrared photodetectorshigh-frequency semiconductorsresearch photovoltaicswide-bandgap electronicsthermal management devices

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Bulk Modulus(K)	125.1	GPa	—
Shear Modulus(G)	58.16	GPa	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.8625	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	0.01700	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

N1 In1

Mechanical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control