N1 Ho1 is an experimental rare-earth semiconductor compound containing holmium, likely in a binary or ternary phase with nitrogen or another light element. This material belongs to the broader family of rare-earth compounds being investigated for optoelectronic and magnetic applications, where holmium's electronic and magnetic properties can be engineered through controlled composition. Research on holmium-containing semiconductors typically focuses on infrared photonics, magnetooptical devices, and specialized quantum or spin-dependent electronics, though N1 Ho1 remains in the development stage and has not yet achieved widespread industrial adoption.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 174.3 | GPa | — | ||
Shear Modulus(G) | 132.8 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.3324 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.975 | eV/atom | — |