MoSeS is a molybdenum diselenide compound that belongs to the family of transition metal dichalcogenides (TMDs), a class of layered materials with strong in-plane bonding and weak interlayer interactions. This material is primarily of research and emerging technology interest rather than established industrial production, with potential applications in optoelectronics, energy storage, and catalysis where its semiconductor properties and layer-dependent characteristics offer advantages over conventional materials.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 61.61 | GPa | — | ||
Poisson's Ratio(ν) | 0.2300 | - | — | ||
Shear Modulus(G) | 42.21 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 5.775 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.6240 | eV | — | ||
Dielectric Constant (Relative Permittivity)(εr) | 16.89 | - | — | ||
Magnetic Moment(μB) | 0.000 | µB | — | ||
Piezoelectric Modulus(eij) | 0.06469 | C/m² | — | ||
Seebeck Coefficient(S) | -164.1 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.01710 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.7995 | eV/atom | — |