Mo4Se6S2 is a layered transition metal chalcogenide semiconductor composed of molybdenum, selenium, and sulfur atoms. This mixed-chalcogenide compound belongs to the family of two-dimensional (2D) materials and is primarily of research and developmental interest for next-generation electronic and optoelectronic devices. The material is notable for its tunable bandgap and favorable properties for applications requiring ultrathin semiconducting layers, offering potential advantages over single-chalcogenide alternatives (such as MoS2) in terms of band structure engineering and device performance optimization.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 37.71 | GPa | — | ||
Shear Modulus(G) | 26.63 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.3849 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.7140 | eV/atom | — |