Mo₃W₁Se₄S₄ is a mixed-chalcogenide layered semiconductor compound combining molybdenum, tungsten, selenium, and sulfur in a single-phase structure. This material belongs to the transition metal dichalcogenide (TMD) family and is primarily studied in research contexts for its tunable electronic and optical properties arising from the heteroatom composition. Industrial applications remain emerging, but the material shows promise in optoelectronics, catalysis, and energy storage due to the synergistic effects of multiple chalcogenide elements and the possibility of band-gap engineering through compositional control.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 64.28 | GPa | — | ||
Shear Modulus(G) | 44.61 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.6486 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.7710 | eV/atom | — |