Mo3 W1 S8
semiconductorMo₃W₁S₈ is a mixed-metal transition metal dichalcogenide (TMD) compound combining molybdenum, tungsten, and sulfur in a layered crystal structure. This is an experimental/research material being investigated for its electronic and catalytic properties, as the tungsten doping modifies the electronic band structure and active sites compared to pure MoS₂. The material shows promise in electrocatalysis, particularly for hydrogen evolution reactions and water splitting, where the synergistic effects of Mo-W heteroatoms can improve activity over single-metal alternatives; it is also being explored in optoelectronics, energy storage, and sensing applications where 2D TMDs with engineered defects and dopants offer tunable performance.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | — | eV/atom | — | — |