Mo₂W₁Se₆ is a mixed-metal transition metal dichalcogenide (TMD) semiconductor combining molybdenum, tungsten, and selenium in a layered crystal structure. This is primarily a research material being investigated for optoelectronic and energy-storage applications, where alloying molybdenum and tungsten selenides aims to engineer bandgap properties and carrier mobility beyond single-metal TMD compounds. The material represents an emerging class of two-dimensional semiconductors with potential for flexible electronics, photocatalysis, and next-generation photovoltaic devices, though industrial-scale adoption remains limited and applications are largely in academic development stages.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 30.46 | GPa | — | ||
Shear Modulus(G) | 22.21 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.056 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.6020 | eV/atom | — |