Mo₁W₃Se₆S₂ is a mixed transition metal dichalcogenide semiconductor, a layered compound combining molybdenum, tungsten, selenium, and sulfur in a hybrid structure. This material is primarily investigated in research contexts for its potential in two-dimensional electronics and optoelectronics, leveraging the tunable bandgap and enhanced charge carrier mobility that arise from the substitution of selenium and sulfur anions within the layered framework. Engineers and researchers consider this compound family for applications requiring atomically-thin semiconductors with modified electronic properties compared to pure MoS₂ or WS₂, though it remains largely in the development phase outside specialized research programs.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 38.68 | GPa | — | ||
Shear Modulus(G) | 28.21 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.2950 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.6190 | eV/atom | — |