Mo1W3Se4S4 is a mixed-transition-metal chalcogenide semiconductor composed of molybdenum, tungsten, selenium, and sulfur. This is a research-phase compound belonging to the family of layered dichalcogenides and heterostructured 2D materials, designed to combine properties of molybdenum disulfide and tungsten diselenide for enhanced electronic and optical performance. The material is primarily of interest in emerging photovoltaic, optoelectronic, and catalytic applications where tuning the bandgap and charge-carrier dynamics through multielement doping offers advantages over single-transition-metal alternatives.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.7049 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.6960 | eV/atom | — |