MnZnCdTe3 is a quaternary compound semiconductor combining manganese, zinc, cadmium, and tellurium elements. This material belongs to the family of II-VI semiconductors and is primarily of research interest for optoelectronic and photonic device applications where bandgap engineering and tunable electronic properties are required.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 5.309 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.2450 | eV | — | ||
Magnetic Moment(μB) | 4.993 | µB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.05980 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.2809 | eV/atom | — |