MnSnO3 is a ternary oxide semiconductor composed of manganese, tin, and oxygen, belonging to the class of mixed-metal oxides with potential perovskite-related crystal structures. This material is primarily investigated in research contexts for photocatalytic applications, particularly in environmental remediation and water purification, as well as in energy storage and optoelectronic devices where its band gap and electronic properties can be engineered through doping or structural modification. MnSnO3 offers advantages over single-component oxides by combining the catalytic activity of manganese oxides with the electronic properties of tin oxides, making it a candidate material in emerging applications where conventional semiconductors are less effective.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 6.086 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)3 entries | 0.8510 | eV | — | ||
| ↳ | 0.000 | eV | — | ||
| ↳ | 0.000 | eV | — | ||
Dielectric Constant (Relative Permittivity)(εr)2 entries | 13.04 | - | — | ||
| ↳ | 733.2 | - | — | ||
Electronic Dielectric Tensor(ε∞) | Matrix (redacted) | - | — | ||
Total Dielectric Tensor(ε) | Matrix (redacted) | - | — | ||
Magnetic Moment(μB)3 entries | 1.000 | μB | — | ||
| ↳ | -4.620 | μB | — | ||
| ↳ | 9.937 | µB | — | ||
Piezoelectric Modulus(eij)2 entries | 0.4796 | C/m² | — | ||
| ↳ | 2.785 | C/m² | — | ||
Piezoelectric Stress Tensor(eij) | Matrix (redacted) | C/m² | — | ||
Seebeck Coefficient(S) | -50.17 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.09840 | eV/atom | — | ||
Formation Energy(ΔHf)3 entries | -1.984 | eV/atom | — | ||
| ↳ | 0.3400 | eV/atom | — | ||
| ↳ | -1.612 | eV/atom | — |