MnInN3 is a ternary nitride compound combining manganese, indium, and nitrogen, belonging to the family of metal nitrides with potential semiconductor or electronic material properties. This is primarily a research-phase material rather than an established commercial product; compounds in this material family are being investigated for applications in optoelectronics, photovoltaics, and next-generation electronic devices due to their tunable band gaps and potential for novel crystal structures. Engineers would consider MnInN3-based systems as alternatives to conventional semiconductors in specialized research contexts where the unique electronic or magnetic properties of mixed transition-metal nitrides offer advantages over binary nitrides.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | DFT · GLLB-SC | ||
Magnetic Moment(μB) | 3.604 | μB | DFT |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 1.680 | eV/atom | DFT |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data