MnGeAs₂ is an intermetallic compound combining manganese, germanium, and arsenic, belonging to the family of ternary semiconducting or semimetallic materials. This is a research-phase compound primarily studied for its potential in thermoelectric and magnetic applications, where the combination of elements offers possibilities for tailoring electronic band structure and phonon scattering. While not yet established in mainstream industrial production, MnGeAs₂-family materials are of interest to materials scientists exploring alternatives to conventional thermoelectrics and magnetic semiconductors, particularly for specialized high-temperature or magnetocaloric device concepts.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 52.91 | GPa | — | ||
Poisson's Ratio(ν) | 0.4100 | - | — | ||
Shear Modulus(G) | 12.59 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 4.865 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | — | ||
Magnetic Moment(μB) | 7.614 | µB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.2252 | eV/atom | — | ||
Formation Energy(ΔHf) | 0.09730 | eV/atom | — |