MnGaO₂N is an experimental oxynitride ceramic compound combining manganese, gallium, oxygen, and nitrogen—a material class designed to bridge properties of oxides and nitrides. Research into this compound focuses on semiconducting and photocatalytic applications, where the mixed anion structure (O and N) can enable tunable bandgaps and enhanced light absorption compared to conventional single-anion ceramics. This material remains primarily in the research phase and represents the broader effort to engineer ternary and quaternary nitride-oxide systems for energy conversion and environmental remediation.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | DFT · GLLB-SC | ||
Magnetic Moment(μB) | -3.124 | μB | DFT |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 0.7200 | eV/atom | DFT |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data