MnGaN3

metal

· MnGaN3

MnGaN3 is an experimental ternary nitride compound combining manganese, gallium, and nitrogen, belonging to the family of metal nitrides and related to III-V semiconductor and transition-metal nitride systems. This material is primarily a research-phase compound investigated for potential applications in wide-bandgap semiconductors, magnetic materials, or advanced functional ceramics, though it has not yet achieved widespread industrial adoption. Engineers would consider this material if exploring novel nitride-based systems for extreme environments, high-temperature electronics, or magnetoelectric applications where conventional nitrides (GaN, AlN) or ferromagnetic materials fall short.

wide-bandgap semiconductors (research)high-temperature electronicsmagnetic functional materialsadvanced ceramics (exploratory)transition-metal nitride coatingsmaterials discovery and modeling

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.000	eV	—
Magnetic Moment(μB)	1.005	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	1.880	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

MnGaN3

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control