MnGa2Se4 is a ternary compound semiconductor belonging to the manganese chalcogenide family, combining manganese, gallium, and selenium elements. This material is primarily of research interest for optoelectronic and spintronic applications, where the magnetic properties of manganese combined with semiconductor characteristics enable novel functionality in light emission, detection, and spin-dependent transport. Engineers consider this material for next-generation devices requiring integrated magnetic and electronic properties, though it remains largely experimental outside specialized research environments.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 41.01 | GPa | — | ||
Poisson's Ratio(ν) | 0.2900 | - | — | ||
Shear Modulus(G) | 22.03 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 4.829 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.7210 | eV | — | ||
Dielectric Constant (Relative Permittivity)(εr) | 81.61 | - | — | ||
Magnetic Moment(μB) | 5.000 | µB | — | ||
Piezoelectric Modulus(eij) | 0.6448 | C/m² | — | ||
Seebeck Coefficient(S) | -203.8 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.00120 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.5295 | eV/atom | — |