Mn6 As2
semiconductorMn₆As₂ is a manganese arsenide compound belonging to the semiconductor and intermetallic materials family, characterized by a defined stoichiometric ratio of manganese and arsenic atoms. This material is primarily of research and exploratory interest rather than established high-volume commercial use; it falls within the broader category of transition metal pnictides that show promise for magnetic, electronic, and thermoelectric applications. Engineers and materials scientists investigate compounds like Mn₆As₂ for potential use in next-generation magnetic devices, spintronic applications, and temperature-dependent semiconductor functionality where conventional semiconductors or magnetic alloys reach performance limits.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 216.2 | GPa | — | ||
Shear Modulus(G) | 94.20 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.00840 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 0.01900 | eV/atom | — |