Mn4 Ge4 N8

semiconductor

· Mn4 Ge4 N8

Mn₄Ge₄N₈ is an experimental transition metal nitride-germanide compound belonging to the family of ternary nitride semiconductors. This research-phase material combines manganese and germanium with nitrogen in a stoichiometric framework, investigated primarily for its potential in wide-bandgap semiconductor applications and spintronic devices. The material represents an emerging class of compounds being explored to enable high-temperature electronics, ferromagnetic semiconductors, and advanced optoelectronic components where conventional semiconductors reach performance limits.

high-temperature semiconductorsspintronics researchferromagnetic semiconductorswide-bandgap electronicsemerging optoelectronicsadvanced materials research

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Bulk Modulus(K)	123.9	GPa	—
Shear Modulus(G)	30.90	GPa	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.00320	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-0.07900	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Mn4 Ge4 N8

Mechanical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control