Mn3 V3 Te2 O16

semiconductor

· Mn3 V3 Te2 O16

Mn₃V₃Te₂O₁₆ is a mixed-metal oxide semiconductor combining manganese, vanadium, and tellurium in a complex ternary structure. This is primarily a research-phase material investigated for its potential in energy storage, catalysis, and solid-state electronics, where the synergistic combination of transition metals may enable tunable electronic properties and redox activity not achievable in binary oxides.

battery electrode materials (research)catalytic applicationssolid-state electronicsthermoelectric devices (exploratory)oxygen evolution/reduction catalysisadvanced semiconductor research

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.01510	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-1.811	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Mn3 V3 Te2 O16

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control