Mn₂Zn₁As₂ is a ternary semiconductor compound belonging to the III-V semiconductor family, composed of manganese, zinc, and arsenic. This material is primarily of research interest for potential applications in spintronics and magnetic semiconductor devices, where the magnetic properties of manganese combined with semiconductor functionality could enable spin-dependent electronic transport. While not yet widely commercialized, materials in this class are investigated as alternatives to established II-VI and III-V semiconductors for specialized applications requiring integrated magnetic and electronic properties.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 78.29 | GPa | — | ||
Shear Modulus(G) | 9.933 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.03020 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 0.1290 | eV/atom | — |