Mn2 Sn2 Ba1

semiconductor

· Mn2 Sn2 Ba1

Mn₂Sn₂Ba₁ is a ternary intermetallic semiconductor compound combining manganese, tin, and barium elements. This material remains primarily in the research and development phase, with investigation focused on its electronic and structural properties for potential applications in thermoelectric devices and energy conversion systems. The compound belongs to the broader family of Heusler-type and half-Heusler intermetallics, which are actively studied for their tunable band structures and potential spin-dependent electronic behavior.

thermoelectric energy conversionsemiconductor researchmagnetic materials developmentelectronic device materialsmaterials discovery

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Bulk Modulus(K)	46.47	GPa	—
Shear Modulus(G)	21.08	GPa	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.02270	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-0.09800	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Mn2 Sn2 Ba1

Mechanical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control