Mn2 Os1 C6 N6

semiconductor

· Mn2 Os1 C6 N6

Mn₂Os₁C₆N₆ is an experimental transition metal carbide-nitride compound containing manganese and osmium, belonging to the class of complex refractory semiconductors. This research-phase material is being investigated for potential applications in high-temperature electronics, catalysis, and extreme-environment device architectures where conventional semiconductors fail. The incorporation of osmium—a rare, high-density refractory metal—combined with carbide and nitride phases suggests interest in thermal stability and chemical resilience; however, limited practical deployment exists at present, with development concentrated in materials science research contexts.

high-temperature electronics (research)refractory semiconductor materialscatalytic applications (exploratory)extreme-environment sensing devicestransition metal compound development

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.04760	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	0.1030	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Mn2 Os1 C6 N6

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control