Mn2 Ni2 Bi4 O12

semiconductor

· Mn2 Ni2 Bi4 O12

Mn₂Ni₂Bi₄O₁₂ is a complex oxide semiconductor belonging to the bismuth-based layered perovskite family, combining manganese, nickel, and bismuth cations in a structured lattice. This is primarily a research compound of interest for its potential photocatalytic, magnetoelectric, or optoelectronic properties rather than an established commercial material. The material family is being investigated for applications requiring controlled band gaps, mixed-valence transition metals, or coupling between magnetic and electronic properties.

photocatalysis and water splittingmagnetoelectric devicesvisible-light responsive coatingsenvironmental remediation catalyststhin-film semiconductor researchmultiferroic material development

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.00380	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-1.380	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Mn2 Ni2 Bi4 O12

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control